Datasheet > 1N5396

1N5396

更新时间： 2024-10-31 14:52:59

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
2页	285K
描述
Rectifier device Common rectifier diodes

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1N5396 数据手册

1N5391 - 1N5399

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.5 A

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds,0.37” 5(9.5mm) lead length,

5 lbs. (2.3kg) tension

DO-15

Min

Mechanical Data

Dim

Max

—

Case : DO-15 Molded plastic

Epoxy : UL94V-O rate flame retardant

Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

25.40

5.50

7.62

0.889

3.60

0.686

2.60

Polarity : Color band denotes cathode end

Mounting position : Any

All Dimensions in mm

Weight : 0.465 gram

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

1N 1N 1N

SYMBOLS

UNITS

5391 5392 5393 5394 5395 5396 5397 5398 5399

Maximum repetitive peak reverse voltage

Maximum RMS voltage

50 100 200 300 400 500 600 800 1000 VOLTS

35 70 140 210 280 350 420 560 700 VOLTS

50 100 200 300 400 500 600 800 1000 VOLTS

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I(AV)

1.5

Amps

IFSM

50.0

1.4

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 1.5A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

50.0

TA=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

20.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +175

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

1 of 2

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与1N5396相关器件

型号	品牌	获取价格	描述	数据表
1N5396(G)	LGE	获取价格	暂无描述
1N5396/4E	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5396/4G	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5396/4H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5396/56	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5396/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5396/65	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5396/66	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5396/70	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5396/72	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,

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