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1N5396G PDF预览

1N5396G

更新时间: 2024-11-26 22:38:03
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
2页 56K
描述
1.5A GENERAL PURPOSE GPP DIODES

1N5396G 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.42
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.4 VJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:500 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N5396G 数据手册

 浏览型号1N5396G的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
1N5391G – 1N5399G  
1.5A  
1.5A GENERAL PURPOSE GPP DIODES  
Maximum  
Forward  
Maximum Average  
Maximum  
Maximum  
Reverse  
Package  
Maximum  
Peak Reverse  
Voltage  
Rectified Current  
@ Half-Wave  
Forward Peak  
Surge Current @  
8.3ms Superimposed  
TYPE  
Dimensions  
Voltage  
Current @ PRV  
@ TA=25ºC  
@ TA=25ºC  
Resistive Load 60Hz  
PRV  
V PK  
I O @ T L  
I FM (Surge)  
A PK  
I
I FM  
APK  
V FM  
V PK  
R
AAV  
ºC  
µAdc  
50  
1N5391G  
1N5392G  
1N5393G  
1N5394G  
1N5395G  
1N5396G  
1N5397G  
1N5398G  
1N5399G  
100  
200  
300  
400  
500  
600  
800  
1000  
1.5  
70  
50  
5.0  
1.5  
1.4  
DO – 41  
.205(5.2)  
.166(4.2)  
1.0(25.4)  
MIN  
1.0(25.4)  
MIN  
.034(0.9)  
.028(0.7)  
DIA  
.107(2.7)  
.080(2.0)  
DIA  
DO – 41  
32A–1/2  

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