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1N5260B PDF预览

1N5260B

更新时间: 2024-11-23 22:37:39
品牌 Logo 应用领域
RECTRON 稳压二极管测试
页数 文件大小 规格书
2页 25K
描述
500mW 5% DO-35 ZENER DIODE

1N5260B 数据手册

 浏览型号1N5260B的Datasheet PDF文件第2页 
1N5223B  
THRU  
1N5261B  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
500mW 5% DO-35 ZENER DIODE  
Absolute Maximun Ratings (Ta=25oC)  
Dimensions  
Items  
Symbol  
PTOT  
Ratings  
500  
Unit  
mW  
DO-35  
Power Dissipation  
Power Derating  
4.0  
1.2  
mW/oC  
o
(above 75 C)  
2 6 M IN  
0 .45 7  
0 .55 9  
Forward Voltage  
@If = 10 mA  
D IA .  
Vf  
V
Vz Tolerence  
5
%
oC  
oC  
Junction Temp.  
Storage Temp.  
TJ  
-65 to 175  
-65 to 175  
4 .2  
m ax .  
TSTG  
Mechanical Data  
Items  
Package  
2 .0  
m ax .  
D IA .  
Materials  
DO-35  
Case  
Hermetically sealed glass  
2 6 M IN  
Lead/Finish  
Chip  
Double Stud/Solder Plating  
Glass Passivated  
Dimensions in millimeters  
Electrical Characteristics (Ta=25oC)  
TEMP.  
COEFF.  
ZENER  
VOLTAGE  
MAX ZENER  
IMPEDANCE  
MAX ZENER  
IMPEDANCE  
Izt = 0.25mA  
MAXIMUM  
REVERSE  
CURRENT  
TYPE  
dvz  
(%/ oC)  
Vz(V) Izt(mA)  
Rz (ohms) Izt(mA0  
Rz (ohms)  
1300  
1400  
1600  
1600  
1700  
1900  
2000  
1900  
1600  
1600  
1600  
1000  
750  
VR (V) IR (uA)  
1N5223B  
1N5224B  
1N5225B  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
2.7  
2.8  
3.0  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.0  
6.2  
6.8  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
30  
30  
29  
28  
24  
23  
22  
19  
17  
11  
7
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
3.0  
3.5  
4.0  
5.6  
75  
75  
50  
25  
15  
10  
5
-0.080  
-0.080  
-0.075  
-0.070  
-0.065  
-0.060  
+/-0.055  
+/-0.030  
+/-0.030  
+/-0.038  
+/-0.038  
+0.045  
+0.050  
5
5
5
5
7
5
5
3

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