Datasheet > 1N5260B-G

1N5260B-G

更新时间： 2024-11-25 01:00:19

品牌	Logo	应用领域
上华 - COMCHIP		/
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描述
Axial Leaded Glass Zener Diode

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中文翻译

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数据手册

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1N5260B-G 数据手册

Axial Leaded Glass Zener Diode

Comchip

S M D D i o d e S p e c i a l i s t

1N5221B-G Thru. 1N5267B-G

Voltage: 2.4 to 75 Volts

Power: 0.5 Watts

RoHS Device

DO-35

Features

-500mW power dissipation

1.02(26.00) Min.

-Stabilizing voltage.

0.165(4.20)Max.

Mechanical data

0.079(2.00)Max.

-Case: Glass, DO-35

1.02(26.00) Min.

-Polarity: Indicated by cathode band

0.022(0.55)Max.

Dimensions in inches and (millimeter)

Maximum Ratings (TA=25°C, unless otherwise noted)

Symbol

Parameter

Conditions

Value

500

Unit

Power dissipation

TL=25°C

Ptot

Zener current

Ptot/VZ

Junction temperature

Storage temperature range

175

°C

TSTG

-65 to +175

Electrical Characteristics (TA=25°C, unless otherwise noted)

Symbol

Parameter

Thermal resistance (Note 1)

Forward voltage

Conditions

Max

300

1.1

Unit

°C/W

junction to ambient air

L=4mm, TL=25°C

RθJA

IF=200mA

Note: Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8”); thermal resistance of heat sink =30°C/W

Company reserves the right to improve product design , functions and reliability without notice.

REV: C

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Comchip Technology CO., LTD.

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