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1N5260B PDF预览

1N5260B

更新时间: 2024-11-19 22:37:39
品牌 Logo 应用领域
美台 - DIODES 稳压二极管测试
页数 文件大小 规格书
2页 36K
描述
500mW EPITAXIAL ZENER DIODE

1N5260B 数据手册

 浏览型号1N5260B的Datasheet PDF文件第2页 
1N5221B - 1N5267B  
500mW EPITAXIAL ZENER DIODE  
Features  
·
·
·
·
·
·
500mW Power Dissipation  
High Stability  
Low Noise  
Surface Mount Equivalents Available  
Hermetic Package  
VZ - Tolerance ±5%  
A
B
A
C
D
Mechanical Data  
DO-35  
·
Case: DO-35, Glass  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.13 grams (approx.)  
Dim  
A
Min  
25.40  
¾
Max  
¾
·
B
4.00  
0.60  
2.00  
·
·
·
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Symbol  
Pd  
Value  
500  
Unit  
mW  
°C/W  
V
RqJA  
300  
Forward Voltage  
@ IF = 200mA  
VF  
1.1  
Tj, TSTG  
°C  
Operating and Storage Temperature Range  
-65 to +200  
Notes:  
1. Valid provided that leads are kept at TL £75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.  
DS18006 Rev. 14 - 2  
1 of 2  
1N5221B - 1N5267B  

1N5260B 替代型号

型号 品牌 替代类型 描述 数据表
1N5260B-1E3 MICROSEMI

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