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1N5257B-G PDF预览

1N5257B-G

更新时间: 2024-11-03 00:55:07
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
4页 84K
描述
Axial Leaded Glass Zener Diode

1N5257B-G 数据手册

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Axial Leaded Glass Zener Diode  
Comchip  
S M D D i o d e S p e c i a l i s t  
1N5221B-G Thru. 1N5267B-G  
Voltage: 2.4 to 75 Volts  
Power: 0.5 Watts  
RoHS Device  
DO-35  
Features  
-500mW power dissipation  
1.02(26.00) Min.  
-Stabilizing voltage.  
0.165(4.20)Max.  
Mechanical data  
0.079(2.00)Max.  
-Case: Glass, DO-35  
1.02(26.00) Min.  
-Polarity: Indicated by cathode band  
0.022(0.55)Max.  
Dimensions in inches and (millimeter)  
Maximum Ratings (TA=25°C, unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Value  
500  
Unit  
mW  
mA  
Power dissipation  
TL=25°C  
Ptot  
IZ  
Zener current  
Ptot/VZ  
Junction temperature  
Storage temperature range  
TJ  
175  
°C  
°C  
TSTG  
-65 to +175  
Electrical Characteristics (TA=25°C, unless otherwise noted)  
Symbol  
Parameter  
Thermal resistance (Note 1)  
Forward voltage  
Conditions  
Max  
300  
1.1  
Unit  
°C/W  
V
junction to ambient air  
L=4mm, TL=25°C  
RθJA  
IF=200mA  
VF  
Note: Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8”); thermal resistance of heat sink =30°C/W  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: C  
Page 1  
QW-BZ001  
Comchip Technology CO., LTD.  

1N5257B-G 替代型号

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