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1N5257B-T PDF预览

1N5257B-T

更新时间: 2024-11-02 04:46:11
品牌 Logo 应用领域
美台 - DIODES 稳压二极管
页数 文件大小 规格书
3页 52K
描述
500mW EPITAXIAL ZENER DIODE

1N5257B-T 数据手册

 浏览型号1N5257B-T的Datasheet PDF文件第2页浏览型号1N5257B-T的Datasheet PDF文件第3页 
SPICE MODELS: 1N5221B 1N5231B 1N5233B 1N5235B 1N5239B 1N5241B  
1N5221B - 1N5267B  
500mW EPITAXIAL ZENER DIODE  
Features  
·
·
·
·
·
·
500mW Power Dissipation  
High Stability  
A
B
A
Surface Mount Equivalents Available  
Hermetic Package  
VZ - Tolerance ±5%  
C
Lead Free Finish, RoHS Compliant (Note 2)  
D
DO-35  
Mechanical Data  
Dim  
A
Min  
25.40  
¾
Max  
¾
·
·
·
·
·
Case: DO-35  
Case Material: Glass  
B
4.00  
0.60  
2.00  
Moisture Sensitivity: Level 1 per J-STD-020C  
Leads: Solderable per MIL-STD-202, Method 208  
C
¾
Terminals: Finish - Sn96.5Ag3.5. Solderable per  
MIL-STD-202, Method 208  
D
¾
All Dimensions in mm  
·
·
·
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.13 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Symbol  
Pd  
Value  
500  
Unit  
mW  
°C/W  
V
RqJA  
300  
Forward Voltage  
@ IF = 200mA  
VF  
1.1  
Tj, TSTG  
°C  
Operating and Storage Temperature Range  
-65 to +200  
Notes:  
1. Valid provided that leads are kept at TL £75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.  
2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied where applicable,  
see EU Directive Annex Notes 5 and 7.  
DS18006 Rev. 15 - 2  
1 of 3  
1N5221B - 1N5267B  
www.diodes.com  
ã Diodes Incorporated  

1N5257B-T 替代型号

型号 品牌 替代类型 描述 数据表
1N5257BTR FAIRCHILD

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Zener Diode, 33V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2

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