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1N5230A-F PDF预览

1N5230A-F

更新时间: 2024-10-27 05:24:23
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
6页 114K
描述
Zener Diode

1N5230A-F 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.55二极管类型:ZENER DIODE
Base Number Matches:1

1N5230A-F 数据手册

 浏览型号1N5230A-F的Datasheet PDF文件第2页浏览型号1N5230A-F的Datasheet PDF文件第3页浏览型号1N5230A-F的Datasheet PDF文件第4页浏览型号1N5230A-F的Datasheet PDF文件第5页浏览型号1N5230A-F的Datasheet PDF文件第6页 
1N5221B-  
1N5267B  
SILICON ZENER DIODES  
VOLTAGE 2.4 To 75 Volts POWER 500 mWatts  
FEATURES  
DO-35  
• Planar Die construction  
• 500mW Power Dissipation  
• Ideally Suited for Automated Assembly Processes  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: Molded Glass DO-35  
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Polarity: See Diagram Below  
• Approx. Weight: 0.13 grams  
• Mounting Position: Any  
• Ordering information: Suffix : “ -35 ” to order DO-35 Package  
• Packing information  
B
- 2K per Bulk box  
T/R - 10K per 13" plastic Reel  
T/B - 5K per horiz. tape & Ammo box  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
500  
Units  
mW  
Power Dissipation at Tamb = 25 OC  
P
TO T  
Junction Temperature  
175  
OC  
OC  
T
J
Storage Temperature Range  
-65 to +175  
TS  
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.  
Parameter  
Symbol  
RQJA  
Min.  
--  
Typ.  
--  
Max.  
0.3*  
Units  
Thermal Resistance Junction to Ambient Air  
K/mW  
V
Forward Voltage at IF = 200mA  
--  
1.1  
VF  
--  
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.  
2015-09  
REV: O  

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