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1N5229BTA PDF预览

1N5229BTA

更新时间: 2024-11-09 20:48:07
品牌 Logo 应用领域
安森美 - ONSEMI 测试二极管
页数 文件大小 规格书
12页 83K
描述
4.3V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

1N5229BTA 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:DO-35包装说明:O-LALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:22 ΩJEDEC-95代码:DO-204AH
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:4.3 V
子类别:Voltage Reference Diodes表面贴装:NO
技术:ZENER端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

1N5229BTA 数据手册

 浏览型号1N5229BTA的Datasheet PDF文件第2页浏览型号1N5229BTA的Datasheet PDF文件第3页浏览型号1N5229BTA的Datasheet PDF文件第4页浏览型号1N5229BTA的Datasheet PDF文件第5页浏览型号1N5229BTA的Datasheet PDF文件第6页浏览型号1N5229BTA的Datasheet PDF文件第7页 
1N5221B Series  
500 mW DO-35 Hermetically  
Sealed Glass Zener Voltage  
Regulators  
This is a complete series of 500 mW Zener diodes with limits and  
excellent operating characteristics that reflect the superior capabilities  
of silicon–oxide passivated junctions. All this in an axial–lead  
hermetically sealed glass package that offers protection in all common  
environmental conditions.  
http://onsemi.com  
Cathode  
Anode  
Specification Features:  
Zener Voltage Range – 2.4 V to 91 V  
ESD Rating of Class 3 (>16 KV) per Human Body Model  
DO–204AH (DO–35) Package – Smaller than Conventional  
DO–204AA Package  
Double Slug Type Construction  
Metallurgical Bonded Construction  
AXIAL LEAD  
CASE 299  
GLASS  
Mechanical Characteristics:  
CASE: Double slug type, hermetically sealed glass  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
230°C, 1/16from the case for 10 seconds  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
MARKING DIAGRAM  
L
1N  
52  
xxB  
YWW  
L
= Assembly Location  
1N52xxB= Device Code  
= (See Table Next Page)  
= Year  
= Work Week  
MAXIMUM RATINGS (Note 1.)  
Y
WW  
Rating  
Symbol  
Value  
Unit  
Max. Steady State Power Dissipation  
P
D
500  
mW  
@ T 75°C, Lead Length = 3/8″  
Derate above 75°C  
L
ORDERING INFORMATION  
4.0  
mW/°C  
°C  
Device  
Package  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Shipping  
Operating and Storage  
Temperature Range  
T , T  
–65 to  
+200  
J
stg  
1N52xxB  
3000 Units/Box  
5000/Tape & Reel  
5000/Tape & Reel  
3000/Ammo Pack  
5000/Ammo Pack  
5000/Ammo Pack  
3000/Tape & Reel  
3000/Tape & Reel  
1. Some part number series have lower JEDEC registered ratings.  
1N52xxBRL  
1N52xxBRL2 *  
1N52xxBRA1  
1N52xxBTA  
1N52xxBTA2 *  
{
1N52xxBRR1  
1N52xxBRR2  
}
* The “2” suffix refers to 26 mm tape spacing.  
{
Polarity band up with cathode lead off first  
Polarity band down with cathode lead off first  
}
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 2  
1N5221B/D  

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