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1N5226B-A PDF预览

1N5226B-A

更新时间: 2024-10-30 04:46:03
品牌 Logo 应用领域
美台 - DIODES 稳压二极管
页数 文件大小 规格书
3页 202K
描述
500mW EPITAXIAL ZENER DIODE

1N5226B-A 数据手册

 浏览型号1N5226B-A的Datasheet PDF文件第2页浏览型号1N5226B-A的Datasheet PDF文件第3页 
1N5221B---1N5279B  
GALAXY ELECTRICAL  
BL  
POWER DISSIPATION: 500 mW  
ZENER DIODES  
FEATURES  
DO-35(GLASS)  
Silicon planar power zener diodes  
Standard Zener voltage tolerance is ±5%. With a "B"  
suffix. Other tolerances are available upon request.  
MECHANICAL DAT A  
Case:DO-35, Glass Case  
Terminals: Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Approx. Weight: 0.13 grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
SYMBOL  
VALUE  
UNIT  
mW  
Zener current (see Table "Characteristics")  
5001)  
175  
Ptot  
TJ  
Power dissipation at Tamb=25  
Junction temperature  
Ts  
-55---+175  
Storage temperature range  
SYMBOL  
RθJA  
MIN  
TYP  
MAX  
3001)  
1.2  
UNIT  
/W  
Thermal resistance junction to ambient  
Forw ard voltage at IF=200mA  
V
V
F
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0284001  

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