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1N5226BAMO PDF预览

1N5226BAMO

更新时间: 2024-11-23 13:03:35
品牌 Logo 应用领域
恩智浦 - NXP 稳压二极管测试
页数 文件大小 规格书
7页 39K
描述
DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

1N5226BAMO 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3.3 V
最大反向电流:25 µA表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL电压温度Coeff-Max:
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

1N5226BAMO 数据手册

 浏览型号1N5226BAMO的Datasheet PDF文件第2页浏览型号1N5226BAMO的Datasheet PDF文件第3页浏览型号1N5226BAMO的Datasheet PDF文件第4页浏览型号1N5226BAMO的Datasheet PDF文件第5页浏览型号1N5226BAMO的Datasheet PDF文件第6页浏览型号1N5226BAMO的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
1N5225B to 1N5267B  
Voltage regulator diodes  
1996 Apr 26  
Product specification  
Supersedes data of April 1992  

与1N5226BAMO相关器件

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1N5226B-AP MCC

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Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS PA
1N5226BAR2 STMICROELECTRONICS

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3.3V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5226BAZ1 STMICROELECTRONICS

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3.3V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5226BAZ2 STMICROELECTRONICS

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3.3V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5226B-B DIODES

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Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional
1N5226BD7 VISHAY

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DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, GLASS, DO-3
1N5226BD7 MICROSEMI

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Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional
1N5226BD7E3 MICROSEMI

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Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional,
1N5226BD8 VISHAY

获取价格

DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, GLASS, DO-3
1N5226BE3 MICROSEMI

获取价格

Zener Diode, 3.3V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERM