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1N5226B-T PDF预览

1N5226B-T

更新时间: 2024-11-23 04:46:03
品牌 Logo 应用领域
美台 - DIODES 稳压二极管
页数 文件大小 规格书
3页 202K
描述
500mW EPITAXIAL ZENER DIODE

1N5226B-T 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:6.69
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:28 Ω
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e2元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:3.3 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:Tin/Silver (Sn96.5Ag3.5)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

1N5226B-T 数据手册

 浏览型号1N5226B-T的Datasheet PDF文件第2页浏览型号1N5226B-T的Datasheet PDF文件第3页 
1N5221B---1N5279B  
GALAXY ELECTRICAL  
BL  
POWER DISSIPATION: 500 mW  
ZENER DIODES  
FEATURES  
DO-35(GLASS)  
Silicon planar power zener diodes  
Standard Zener voltage tolerance is ±5%. With a "B"  
suffix. Other tolerances are available upon request.  
MECHANICAL DAT A  
Case:DO-35, Glass Case  
Terminals: Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Approx. Weight: 0.13 grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
SYMBOL  
VALUE  
UNIT  
mW  
Zener current (see Table "Characteristics")  
5001)  
175  
Ptot  
TJ  
Power dissipation at Tamb=25  
Junction temperature  
Ts  
-55---+175  
Storage temperature range  
SYMBOL  
RθJA  
MIN  
TYP  
MAX  
3001)  
1.2  
UNIT  
/W  
Thermal resistance junction to ambient  
Forw ard voltage at IF=200mA  
V
V
F
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0284001  

1N5226B-T 替代型号

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