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1N5226B(DO-35) PDF预览

1N5226B(DO-35)

更新时间: 2024-11-23 16:54:31
品牌 Logo 应用领域
美微科 - MCC 测试二极管
页数 文件大小 规格书
4页 967K
描述
Zener Diode, 3.3V V(Z), 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN

1N5226B(DO-35) 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-35包装说明:O-LALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3.3 V
表面贴装:NO技术:ZENER
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
工作测试电流:20 mABase Number Matches:1

1N5226B(DO-35) 数据手册

 浏览型号1N5226B(DO-35)的Datasheet PDF文件第2页浏览型号1N5226B(DO-35)的Datasheet PDF文件第3页浏览型号1N5226B(DO-35)的Datasheet PDF文件第4页 
1N5221  
THRU  
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
1N5267  
Features  
500 mW  
·
·
·
Wide Voltage Range Available  
Glass Package  
Zener Diode  
2.4 to 75 Volts  
High Temp Soldering: 250°C for 10 Seconds At Terminals  
DO-35  
Maximum Ratings  
Operating Temperature: -65°C to +200°C  
Storage Temperature: -65°C to +200°C  
500 mWatt DC Power Dissipation  
Power Derating: 4.0mW/°C above 50°C  
Forward Voltage @ 200mA: 1.1 Volts  
Figure 1 - Typical Capacitance  
100  
D
A
Cathode  
Mark  
pf  
B
10  
At zero volts  
At –2 Volts VR  
D
1
C
0
100  
200  
VZ  
Typical Capacitance (pf) – versus – Zener voltage (VZ)  
Figure 2 - Derating Curve  
400  
DIMENSIONS  
mW  
200  
INCHES  
MIN  
---  
MM  
MIN  
DIM  
A
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
---  
---  
B
---  
2.00  
.52  
C
---  
---  
D
1.000  
25.40  
---  
200  
25  
100  
Temperature °C  
Power Dissipation (mW) - Versus - Temperature °C  
150  
www.mccsemi.com  
Revision: 1  
2003/12/19  

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