Datasheet > 1N5221B_1

1N5221B_1

更新时间： 2024-11-20 04:46:03

品牌	Logo	应用领域
美台 - DIODES		稳压二极管
页数	文件大小	规格书
3页	202K
描述
500mW EPITAXIAL ZENER DIODE

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中文翻译

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数据手册

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1N5221B_1 数据手册

1N5221B---1N5279B

GALAXY ELECTRICAL

POWER DISSIPATION: 500 mW

ZENER DIODES

FEATURES

DO-35(GLASS)

Silicon planar power zener diodes

Standard Zener voltage tolerance is ±5%. With a "B"

suffix. Other tolerances are available upon request.

MECHANICAL DAT A

Case:DO-35, Glass Case

Terminals: Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band

Marking: Type Number

Approx. Weight: 0.13 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

SYMBOL

VALUE

UNIT

Zener current (see Table "Characteristics")

500¹⁾

175

P_tot

T_J

Power dissipation at T_amb=25

Junction temperature

T_s

-55---+175

Storage temperature range

SYMBOL

R_θ_JA

MIN

TYP

MAX

300¹⁾

1.2

UNIT

Thermal resistance junction to ambient

Forw ard voltage at I_F=200mA

NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 0284001

12 3

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1N5221B-1	MICROSEMI	获取价格	Zener Diode, 2.4V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLA
1N5221B-1E3	MICROSEMI	获取价格	Zener Diode, 2.4V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERM
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