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1N5221B_11 PDF预览

1N5221B_11

更新时间: 2024-11-20 12:52:51
品牌 Logo 应用领域
美台 - DIODES 稳压二极管
页数 文件大小 规格书
3页 51K
描述
500mW EPITAXIAL ZENER DIODE

1N5221B_11 数据手册

 浏览型号1N5221B_11的Datasheet PDF文件第2页浏览型号1N5221B_11的Datasheet PDF文件第3页 
NOT RECOMMENDED FOR  
NEW DESIGN, USE  
MMSZ52xxB  
1N5221B - 1N5267B  
500mW EPITAXIAL ZENER DIODE  
Features  
500mW Power Dissipation  
High Stability  
Surface Mount Equivalents Available  
Hermetic Package  
VZ - Tolerance ±5%  
Lead Free Finish, RoHS Compliant (Note 2)  
Mechanical Data  
DO-35  
Case: DO-35  
Case Material: Glass  
Moisture Sensitivity: Level 1 per J-STD-020  
Leads: Solderable per MIL-STD-202, Method 208  
Terminals: Finish - Sn96.5Ag3.5. Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.13 grams (approximate)  
Dim  
A
Min  
25.40  
Max  
B
4.00  
0.60  
2.00  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Symbol  
PD  
Value  
500  
Unit  
mW  
°C/W  
V
300  
Rθ  
JA  
1.1  
-65 to +200  
Forward Voltage  
@ IF = 200mA  
VF  
TJ, TSTG  
Operating and Storage Temperature Range  
°C  
Notes:  
1. Valid provided that leads are kept at TL 75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.  
2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.  
DS18006 Rev. 17 - 3  
1 of 3  
1N5221B - 1N5267B  
© Diodes Incorporated  
www.diodes.com  

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