Datasheet > 1N4942GPE/51

1N4942GPE/51

更新时间： 2024-11-19 06:47:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	30K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N4942GPE/51 数据手册

1N4942GP thru 1N4942GP

Vishay Semiconductors

formerly General Semiconductor

Glass Passivated Junction

Fast Switching Rectifier

Reverse Voltage 200 to 1000V

Forward Current 1.0A

DO-204AL (DO-41)

Features

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

• High temperature metallurgically bonded construction

• For use in high frequency rectifier circuits

• Fast switching for high efficiency

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

• Cavity-free glass passivated junction

• Capable of meeting environmental standards of

MIL-S-19500

• 1.0 Ampere operation at T_A=55°C with no thermal runaway

• High temperature soldering guaranteed:

350°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.205 (5.2)

0.160 (4.1)

Dimensions in inches

and (millimeters)

1.0 (25.4)

MIN.

Mechanical Data

Case: JEDEC DO-204AL, molded plastic over glass body

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

0.034 (0.86)

0.028 (0.71)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

0.026 (0.66)

0.023 (0.58)

NOTE: Lead diameter is

for suffix "E" part numbers

Weight: 0.012 oz., 0.3 g

Dimensions in inches and (millimeters)

*Glass-plastic encapsulation technique is covered by

Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP Unit

* Maximum repetitive peak reverse voltage

* Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

* Maximum DC blocking voltage

1000

* Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55°C

I_F(AV)

1.0

* Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

Typical thermal resistance ⁽¹⁾

R_ΘJA

°C/W

°C

* Operating junction and storage temperature range

T_J,T_STG

-65 to +175

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

* Maximum instantaneous forward voltage at 1.0A

V_F

1.3

* Maximum DC reverse current

at rated DC blocking voltage

T_A= 25°C

T_A=150°C

1.0

200

I_R

µA

* Maximum reverse recovery time at

I_F=0.5A, I_R=1.0A, I_rr=0.25A

t_rr

150

250

500

Typical junction capacitance at 4.0V, 1MHz

C_J

Notes:

(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted

*JEDEC registered values

Document Number 88511

27-Feb-02

www.vishay.com

中文翻译

下载PDF

与1N4942GPE/51相关器件

型号	品牌	获取价格	描述	数据表
1N4942GPE/56	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/58	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/64	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/65	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/66	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/71	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/72	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/74	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/91	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GPE/93	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

与1N4942GPE/51相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4942GPE/51

1N4942GPE/51 数据手册

与1N4942GPE/51相关器件

与1N4942GPE/51相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4942GPE/51

1N4942GPE/51 数据手册

与1N4942GPE/51相关器件

与1N4942GPE/51相关文章

您还可以找

您在本页遇到什么问题？