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1N4942GPE/65 PDF预览

1N4942GPE/65

更新时间： 2024-11-22 03:37:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 30K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N4942GPE/65 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-41包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.67其他特性：PATENTED DEVICE, METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-204ALJESD-30 代码：O-PALF-W2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：200 V
最大反向恢复时间：0.15 µs表面贴装：NO
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED

1N4942GPE/65 数据手册

 浏览型号1N4942GPE/65的Datasheet PDF文件第2页 
1N4942GP thru 1N4942GP  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Junction  
Fast Switching Rectifier  
Reverse Voltage 200 to 1000V  
Forward Current 1.0A  
DO-204AL (DO-41)  
Features  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
• High temperature metallurgically bonded construction  
• For use in high frequency rectifier circuits  
• Fast switching for high efficiency  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
• Cavity-free glass passivated junction  
• Capable of meeting environmental standards of  
MIL-S-19500  
• 1.0 Ampere operation at TA=55°C with no thermal runaway  
• High temperature soldering guaranteed:  
350°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.205 (5.2)  
0.160 (4.1)  
Dimensions in inches  
and (millimeters)  
®
1.0 (25.4)  
MIN.  
Mechanical Data  
Case: JEDEC DO-204AL, molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
0.026 (0.66)  
0.023 (0.58)  
NOTE: Lead diameter is  
for suffix "E" part numbers  
Weight: 0.012 oz., 0.3 g  
Dimensions in inches and (millimeters)  
*Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP Unit  
* Maximum repetitive peak reverse voltage  
* Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
* Maximum DC blocking voltage  
1000  
* Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=55°C  
IF(AV)  
1.0  
A
* Peak forward surge current  
8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
25  
A
Typical thermal resistance (1)  
RΘJA  
55  
°C/W  
°C  
* Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
* Maximum instantaneous forward voltage at 1.0A  
VF  
1.3  
V
* Maximum DC reverse current  
at rated DC blocking voltage  
TA= 25°C  
TA=150°C  
1.0  
200  
IR  
µA  
* Maximum reverse recovery time at  
IF=0.5A, IR=1.0A, Irr=0.25A  
trr  
150  
250  
500  
ns  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
15  
pF  
Notes:  
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Document Number 88511  
27-Feb-02  
www.vishay.com  
1
12

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