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1N4942GP PDF预览

1N4942GP

更新时间： 2024-11-18 06:16:19
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管开关
页数 文件大小 规格书
2页 153K
描述
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:200 TO 1000V CURRENT: 1.0A

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1N4942GP 数据手册

 浏览型号1N4942GP的Datasheet PDF文件第2页 
1N4942GP THRU 1N4948GP  
SINTERED GLASS JUNCTION  
FAST SWITCHING PLASTIC RECTIFIER  
VOLTAGE:200 TO 1000V  
CURRENT: 1.0A  
DO-41\DO-204AL  
FEATURE  
High temperature metallurgically bonded construction  
Sintered glass cavity free junction  
Capability of meeting environmental standard of  
MIL-S-19500  
High temperature soldering guaranteed  
350˚C /10sec/0.375”lead length at 5 lbs tension  
Operate at Ta =55˚C with no thermal run away  
Typical Ir<0.1µA  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25˚C, unless otherwise stated)  
1N4942  
GP  
200  
140  
200  
1N4944 1N4946 1N4947 1N4948  
SYMBOL  
units  
GP  
400  
280  
400  
GP  
600  
420  
600  
GP  
800  
560  
800  
GP  
1000  
700  
*
*
*
*
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Maximum DC blocking Voltage  
Maximum Average Forward Rectified  
Current 3/8”lead length at Ta =55˚C  
Peak Forward Surge Current 8.3ms single  
Half sine-wave superimposed on rated load  
Maximum Forward Voltage at rated Forward  
Current and 25˚C  
Vrrm  
Vrms  
Vdc  
V
V
V
1000  
If(av)  
Ifsm  
Vf  
1.0  
25.0  
1.3  
A
A
V
*
*
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25˚C  
Ta =125˚C  
5.0  
200  
µA  
µA  
Ir  
*
*
Maximum Reverse Recovery Time (Note 1)  
Trr  
Cj  
R(ja)  
Tstg, Tj  
150  
250  
500  
nS  
pF  
˚C /W  
˚C  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
15.0  
55.0  
Storage and Operating Junction Temperature  
-65 to +175  
Note:  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
* JEDEC registered value  
Rev.A4  
www.gulfsemi.com  
12

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与1N4942GP相关器件

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1N4942GP/100 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/23 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/4E VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/4H VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/51 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/54 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/56 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/62 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/65 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4942GP/66 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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