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1N4933GPE PDF预览

1N4933GPE

更新时间： 2024-11-01 19:46:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 30K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

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1N4933GPE 技术参数

生命周期：Transferred零件包装代码：DO-204
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.07
其他特性：UL RECOGNIZED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：DO-204AL
JESD-30 代码：O-PALF-W2元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM认证状态：Not Qualified
最大重复峰值反向电压：50 V最大反向恢复时间：0.2 µs
表面贴装：NO端子形式：WIRE
端子位置：AXIALBase Number Matches：1

1N4933GPE 数据手册

 浏览型号1N4933GPE的Datasheet PDF文件第2页 
1N4933GP thru 1N4937GP  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Junction  
Fast Switching Rectifier  
Reverse Voltage 50 to 600V  
Forward Current 1.0A  
DO-204AL (DO-41)  
Features  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
• High temperature metallurgically bonded construction  
• Capable of meeting environmental standards of  
MIL-S-19500  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
• For use in high frequency rectifier circuits  
• Fast switching for high efficiency  
• Cavity-free glass passivated junction  
• 1.0 Ampere operation at TA=75°C with no thernal runaway  
• Typical IR less than 0.1µA  
0.205 (5.2)  
0.160 (4.1)  
• High temperature soldering guaranteed:  
300°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
Dimensions in inches  
and (millimeters)  
®
1.0 (25.4)  
MIN.  
Mechanical Data  
0.034 (0.86)  
Case: JEDEC DO-204AL, molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
0.028 (0.71)  
DIA.  
0.026 (0.66)  
0.023 (0.58)  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.012 oz., 0.34 g  
NOTE: Lead diameter is  
for suffix "E" part numbers  
Dimensions in inches and (millimeters)  
*Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol 1N4933GP 1N4934GP 1N4935GP 1N4936GP 1N4937GP Unit  
*Maximum repetitive peak reverse voltage  
*Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
145  
200  
400  
280  
400  
600  
420  
600  
V
V
V
*Maximum DC blocking voltage  
100  
*Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=75°C  
IF(AV)  
1.0  
A
*Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Typical thermal resistance (1)  
RΘJA  
55  
°C/W  
°C  
*Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
*Maximum instantaneous forward voltage at 1.0A  
VF  
1.2  
V
*Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=125°C  
5.0  
100  
IR  
µA  
*Maximum reverse recovery time at  
IF=1.0A, VR=30V  
trr  
200  
15  
ns  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
pF  
Notes:  
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Document Number 88509  
27-Feb-02  
www.vishay.com  
1
12

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