WTE
POWER SEMICONDUCTORS
Pb
1N4933 – 1N4937
1.0A FAST RECOVERY DIODE
Features
!
Diffused Junction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim
A
Min
25.4
4.06
0.71
2.00
Max
—
!
!
!
!
!
B
5.21
0.864
2.72
C
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N4933
1N4934
1N4935
1N4936
1N4937
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
400
280
600
420
V
RMS Reverse Voltage
VR(RMS)
IO
140
1.0
V
A
Average Rectified Output Current
(Note 1)
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
1.2
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
100
µA
Reverse Recovery Time (Note 2)
trr
Cj
200
15
nS
pF
°C
°C
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +125
-65 to +150
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1N4933 – 1N4937
1 of 4
© 2006 Won-Top Electronics