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1N4933 PDF预览

1N4933

更新时间: 2024-10-31 14:52:39
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1567K
描述
DO-41

1N4933 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
41 Plastic-Encapsulate Diodes  
1N4933 THRU 1N4937  
Fast Recovery Rectifier Diodes  
Features  
● IF(AV)  
1A  
DO-41  
● VRRM  
50V-600V  
● High surge current capability  
Polarity: Color band denotes cathode  
Applications  
● Rectifier  
Marking  
1N49XX  
:
XX From 33To 37  
Limiting Values(Absolute Maximum Rating)  
1N49  
35  
Item  
Symbol Unit  
Test Conditions  
33  
34  
36  
37  
VRRM  
V
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
50  
100  
200  
400  
600  
V
V
VRMS  
35  
50  
70  
140  
200  
280  
400  
420  
600  
VDC  
Maximum DC Blocking Voltage  
100  
60Hz Half-sine wave  
Resistance loadTa=75℃  
Average Forward Current  
1.0  
IF(AV)  
A
A
60Hz Half-sine wave  
1 cycleTa=25℃  
Surge(Non-repetitive)Forward  
Current  
30  
IFSM  
-55 ~ +150  
-55 ~ +150  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
Electrical Characteristics (T=25Unless otherwise specified  
Value  
Symbol Unit  
Test Condition  
Item  
VFM  
V
IFM =1.0A  
1.2  
Maximum Peak Forward Voltage  
IRRM2  
5
T =25  
a
Peak Reverse Current  
VRM=VRRM  
μA  
50  
T =125℃  
a
IRRM1  
Reverse Recovery time  
ns  
t
IF=0.5A,IR=1.0A,Irr =0.25A  
200  
rr  
Measured at 1MHz and applied  
reverse voltage of 4.0V D.C.  
15  
CJ  
Typical junction capacitance  
pF  
Between junction and ambient  
Rθ  
50  
J-A  
J-L  
/  
Typical Thermal Resistance  
W
8
Rθ  
Between junction and lead  
Notes:  
Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted  
www.jscj-elec.com  
Rev. - 1.0  
1

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