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1N4684TAP

更新时间: 2024-11-09 12:59:55
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
6页 53K
描述
Zener Diode, 3.3V V(Z), 5%, 0.5W,

1N4684TAP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
配置:SINGLE二极管类型:ZENER DIODE
JESD-609代码:e3元件数量:1
最高工作温度:175 °C最大功率耗散:0.5 W
标称参考电压:3.3 V子类别:Voltage Reference Diodes
表面贴装:NO端子面层:Tin (Sn)
最大电压容差:5%工作测试电流:0.05 mA
Base Number Matches:1

1N4684TAP 数据手册

 浏览型号1N4684TAP的Datasheet PDF文件第2页浏览型号1N4684TAP的Datasheet PDF文件第3页浏览型号1N4684TAP的Datasheet PDF文件第4页浏览型号1N4684TAP的Datasheet PDF文件第5页浏览型号1N4684TAP的Datasheet PDF文件第6页 
1N4678...1N4717  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Zener voltage specified at 50 A  
Maximum delta V given from 10 A to 100 A  
Z
Very high stability  
Low noise  
Applications  
94 9367  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
l=4mm, T =25 C  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
L
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
l=4mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =100mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85586  
Rev. 2, 01-Apr-99  
1 (6)  

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