1N4531

更新时间： 2024-11-05 07:21:19

品牌	Logo	应用领域
EIC		二极管开关
页数	文件大小	规格书
2页	62K
描述
HIGH SPEED SWITCHING DIODES

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中文翻译

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数据手册

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1N4531 数据手册

TH97/10561QM

TW00/17276EM

IATF 0060636

SGS TH07/1033

HIGH SPEED SWITCHING DIODES

1N4531 ~ 1N4532

DO - 34 Glass

FEATURES :

• High switching speed: max. 4 ns

1.00 (25.4)

0.078 (2.0 )max.

min.

• Continuous reverse voltage:max. 75 V

• Repetitive peak reverse voltage:max. 75 V

• Repetitive peak forward current:max. 450 mA.

• Pb / RoHS Free

0.118 (3.0)

Cathode

max.

Mark

1.00 (25.4)

min.

0.017 (0.43)max.

MECHANICAL DATA :

Case: DO-34 Glass Case

Weight: approx. 0.11g

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specifie.d)

Parameter

Symbol

V_RRM

V_RM

I_F

Value

Unit

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

Maximum Continuous Forward Current

Maximum Repetitive Peak Forward Current

200

I_FRM

P_D

450

(1)

500

Maximum Power Dissipation

I_FSM

T_J

0.5

Maximum Surge Forward Current at t < 1s, Tj = 25 °C

Maximum Junction Temperature

200

°C

T_S

Storage Temperature Range

-65 to + 200

°C

Electrical Characteristics (Tj = 25°C unless otherwise noted)

Test Condition

Min

Typ

Max

Unit

Parameter

Symbol

V_R= 20 V

μA

1N4531

1N4532

V_R= 20 V , Tj = 150 °C

V_R= 50 V

I_R

Reverse Current

100

V_R= 50 V , Tj = 150 °C

I_F= 10 mA

V_F

Forward Voltage

Diode Capacitance

1N4531

1N4532

4.0

2.0

f = 1MHz ; V_R= 0

I_F= 10 mA to I_R= 60mA

R_L= 100 Ω ; Measured

at I_R= 1 mA

Reverse Recovery Time

Trr

1N4531

1N4532

Page 1 of 2

Rev. 03 : December 3, 2008

中文翻译

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