Datasheet > 1N4531

1N4531

更新时间： 2024-11-05 05:56:31

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
1页	118K
描述
SILICON EPITAXIAL PLANAR DIODES

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中文翻译

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数据手册

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1N4531 数据手册

1N4531, 1N4532

SILICON EPITAXIAL PLANAR DIODES

Fast Switching Diode

Max. 0.45

Min. 27.5

Max. 2.9

Min. 27.5

Max. 1.9

Black

Cathode Band

Black

Part No.

XXX

Glass Case DO-34

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Repetitive Peak Reverse Voltage

Continuous Reverse Voltage

Continuous Forward Current

Symbol

V_RRM

V_R

Value

Unit

I_F

200

450

Repetitive Peak Forward Current

I_FRM

Non-repetitive Peak Forward Current

at t = 1 µs

at t = 1 ms

at t = 1 s

I_FSM

0.5

Power Dissipation

P_tot

T_j

500

200

Junction Temperature

Storage Temperature Range

T_S

- 65 to + 200

Characteristics at T_j= 25 C

Parameter

Symbol

V_F

Max.

Unit

Forward Voltage

at I_F= 10 mA

Reverse Current

at V_R= 20 V

at V_R= 50 V

at V_R= 20 V, T_j= 150 C

at V_R= 50 V, T_j= 150 C

1N4531

1N4532

1N4531

1N4532

I_R

100

µA

100

Diode Capacitance

at f = 1 MHz

1N4531

1N4532

C_d

Reverse Recovery Time

at I_F= 10 mA, I_R= 60 mA, R_L= 100 Ω

t_rr

1N4531

1N4532

at I_F= 10 mA, I_R= 10 mA, R_L= 100 Ω

Forward Recovery Voltage

at I_F= 100 mA, t_r≤ 30 ns

V_fr

Thermal Resistance from Junction to Ambient

R_thJA

350

K/W

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 23/06/2007

中文翻译

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