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1N4246

更新时间: 2024-11-23 07:21:15
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
1页 99K
描述
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N4246 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliant风险等级:5.64
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:400 V最大反向恢复时间:5 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4246 数据手册

  
Certificate TH97/10561QM  
Certificate TW00/17276EM  
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIERS  
1N4245 - 1N4249  
M1A  
PRV : 200 - 1000 Volts  
Io : 1.0 Ampere  
FEATURES :  
* Glass passivated chip  
* High forward surge current capability  
* High reliability  
1.00 (25.4)  
0.085(2.16)  
MIN.  
0.075(1.91)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
0.138(3.51)  
0.122(3.10)  
MECHANICAL DATA :  
* Case : M1A Molded plastic  
1.00 (25.4)  
0.024(0.60)  
MIN.  
0.022(0.55)  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.20 gram (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 1N4245 1N4246 1N4247 1N4248 1N4249 UNIT  
VRWM  
VBR(MIN)  
IF(AV)  
Maximum Working Peak Reverse Voltage  
Minimum Breakdown Voltage @ 100 μA  
Maximum Average Forward Current at Ta = 55 °C  
Peak Forward Surge Current  
200  
240  
400  
480  
600  
720  
1.0  
800  
960  
1000  
1150  
V
V
A
IFSM  
25  
A
8.3 ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
Maximum Forward Voltage at IF = 3.0 A  
VF  
IR  
1.3  
1.0  
V
at VRWM, Ta = 25 °C  
at VRWM, Ta = 150 °C  
Maximum Reverse Current  
μA  
IR(H)  
150  
Maximum Reverse Recovery Time ( Note 1 )  
Thermal Resistance , Junction to Lead (Note 2)  
Operating Junction and Storage Temperature Range  
Trr  
5.0  
μs  
°C/W  
°C  
RӨJL  
TJ, TSTG  
42  
-65 to +175  
Notes :  
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A.  
(2) At 3/8"(10 mm) lead length form body.  
Page 1 of 1  
Rev. 03 : November 2, 2006  

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