Datasheet > 1N4246GP-HE3/54

1N4246GP-HE3/54

更新时间： 2024-01-27 20:05:14

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	72K
描述
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode

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1N4246GP-HE3/54 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-41
包装说明：	ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.67
Is Samacsys：	N	Base Number Matches：	1

1N4246GP-HE3/54 数据手册

1N4245GP thru 1N4249GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

DO-204AL (DO-41)

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

V_RRM

I_FSM

I_R

200 V to 1000 V

25 A

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

1.0 μA

V_F

1.2 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

175 °C

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted) ⁽¹⁾

PARAMETER

SYMBOL 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

I_FSM

I_R(AV)

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Maximum full load reverse current, full cycle

average 0.375" (9.5 mm) lead length at T_A= 55 °C

μA

Operating junction temperature range

Storage temperature range

T_J

- 65 to + 160

- 65 to + 175

°C

T_STG

Note

(1)

JEDEC registered values

Document Number: 88506

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与1N4246GP-HE3/54相关器件

型号	品牌	获取价格	描述	数据表
1N4246GP-HE3/73	VISHAY	获取价格	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
1N4246R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, GLASS PACKAGE-2
1N4247	EIC	获取价格	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N4247	NJSEMI	获取价格	2.5 AMPERE RATED, AXIAL-LEADED, GENERAL PURPOSE RECTIFIERS.
1N4247	SEMTECH	获取价格	General Purpose Silicon Rectifiers
1N4247	MICROSEMI	获取价格	MILITARY RECTIFIERS
1N4247	VISHAY	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER
1N4247	POWEREX	获取价格	Passivated Rectifier
1N4247	CENTRAL	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, GPR-1A, 2 PIN
1N4247BK	CENTRAL	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon,

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