5秒后页面跳转
1N4245GP/93 PDF预览

1N4245GP/93

更新时间: 2024-11-24 09:40:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 328K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N4245GP/93 数据手册

 浏览型号1N4245GP/93的Datasheet PDF文件第2页浏览型号1N4245GP/93的Datasheet PDF文件第3页浏览型号1N4245GP/93的Datasheet PDF文件第4页 
1N4245GP thru 1N4249GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
Major Ratings and Characteristics  
®
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
200 V to 1000 V  
25 A  
1.0 µA  
*
VF  
1.2 V  
d
e
t
n
e
Tj max.  
175 °C  
t
a
P
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
DO-204AL (DO-41)  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP  
Unit  
V
* Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
1.0  
800  
560  
800  
1000  
700  
* Maximum RMS voltage  
V
V
A
* Maximum DC blocking voltage  
1000  
* Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
* Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
25  
50  
A
* Maximum full load reverse current, full cycle  
average 0.375" (9.5 mm) lead length at TA = 55 °C  
IR(AV)  
µA  
* Operating junction temperature range  
* Storage temperature range  
TJ  
- 65 to + 160  
- 65 to + 175  
°C  
°C  
TSTG  
Document Number 88506  
14-Sep-05  
www.vishay.com  
1

与1N4245GP/93相关器件

型号 品牌 获取价格 描述 数据表
1N4245GPE VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4245GPHE3/54 VISHAY

获取价格

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
1N4245GPHE3/73 VISHAY

获取价格

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
1N4245GP-HE3/73 VISHAY

获取价格

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
1N4245R MICROSEMI

获取价格

Rectifier Diode, 1 Element, 1A, Silicon,
1N4245TR CENTRAL

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,
1N4245US MICROSEMI

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-1, 2 PI
1N4245X MICROSEMI

获取价格

暂无描述
1N4245X NJSEMI

获取价格

Diode Switching 200V 1A 2-Pin
1N4246 EIC

获取价格

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS