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1N4245GPHE3/54 PDF预览

1N4245GPHE3/54

更新时间: 2024-11-23 15:39:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 72K
描述
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode

1N4245GPHE3/54 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.38
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:25 A
元件数量:1端子数量:2
最高工作温度:160 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4245GPHE3/54 数据手册

 浏览型号1N4245GPHE3/54的Datasheet PDF文件第2页浏览型号1N4245GPHE3/54的Datasheet PDF文件第3页浏览型号1N4245GPHE3/54的Datasheet PDF文件第4页 
1N4245GP thru 1N4249GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
FEATURES  
• Superectifier structure for high reliability  
application  
SUPERECTIFIER®  
DO-204AL (DO-41)  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
IR  
200 V to 1000 V  
25 A  
Case: DO-204AL, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
1.0 μA  
VF  
1.2 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
175 °C  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) (1)  
PARAMETER  
SYMBOL 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
IFSM  
IR(AV)  
1.0  
25  
50  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
Maximum full load reverse current, full cycle  
average 0.375" (9.5 mm) lead length at TA = 55 °C  
μA  
Operating junction temperature range  
Storage temperature range  
TJ  
- 65 to + 160  
- 65 to + 175  
°C  
°C  
TSTG  
Note  
(1)  
JEDEC registered values  
Document Number: 88506  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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