Datasheet > 1N4148GP

1N4148GP

更新时间： 2024-11-15 14:54:15

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
3页	203K
描述
小信号开关二极管

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1N4148GP 数据手册

1N4148GP

Silicon Epitaxial Planar Switching Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• Fast switching

Transparent top view

Marking Code : W2

Simplified outline DFN1610-2H and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

Value

100

Unit

Peak Reverse Voltage

Reverse Voltage

V_R

100

Average Rectified Forward Current

I_F(AV)

I_FM

150

300

Peak Forward Current

Non-repetitive Peak Forward Surge Current

at t = 1 s

at t = 1 ms

at t = 1 μs

0.5

I_FSM

P_tot

R_θJA

T_j

300

417

℃/W

℃

Power Dissipation

Thermal Resistance from Junction to Ambient ¹⁾

150

Junction Temperature

T_stg

- 55 to + 150

Storage Temperature Range

℃

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

Characteristics at T_a= 25℃

Parameter

Reverse Breakdown Voltage

Symbol

V_(BR)R

Min.

Max.

Unit

100

at I_R= 100 µA

Forward Voltage

at I_F= 1 mA

at I_F= 10 mA

at I_F= 50 mA

at I_F= 150 mA

0.715

0.855

V_F

1.25

Peak Reverse Current

at V_R= 75 V

at V_R= 20 V

at V_R= 75 V, T_J= 150℃

at V_R= 25 V, T_J= 150℃

µA

I_R

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_F= 10 mA , I_rr= 0.1 × I_R, V_R= 6 V, R_L= 100 Ω

1 / 3

Dated: 23/04/2021 Rev: 01

12 3

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