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1N4143 PDF预览

1N4143

更新时间: 2024-11-11 12:50:27
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
2页 159K
描述
Plastic Silicon Rectifiers

1N4143 数据手册

 浏览型号1N4143的Datasheet PDF文件第2页 
1N4139-1N4146  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 50 --- 1200 V  
CURRENT: 3.0 A  
DO - 27  
Features  
Low cost  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned with Free, Alcohol, Isopropanol  
and similar solvents  
Mechanical Data  
Case: JEDEC DO-27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Dimensions in millimeters  
Polarity: Color band denotes cathode  
Weight: 0.041 ounces,1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
1N  
4140  
1N  
4139  
1N  
1N  
1N  
1N  
1N  
1N  
UNITS  
4141 4142 4143 4144 4145 4146  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000 1200  
700 840  
1000 1200  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
A
A
V
3.0  
IF(AV)  
IFSM  
VF  
9.5mm lead length,  
@TA=75  
Peak forward surge current  
10ms single half-sine-wave  
300.0  
1.0  
superimposed on rated load @TJ=125  
Maximum instantaneous forward voltage  
@ 3.0 A  
Maximum reverse current  
@TA=25  
10.0  
100.0  
A
IR  
at rated DC blocking voltage @TA=100  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
35  
CJ  
/
20  
W
R
JA  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
TSTG  
Note: 1.Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.  
2.Thermal resistance f rom junction to ambient.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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