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1N4148 PDF预览

1N4148

更新时间: 2024-11-10 22:37:31
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 81K
描述
500mW 100 Volt Silicon Epitaxial Diode

1N4148 数据手册

 浏览型号1N4148的Datasheet PDF文件第2页浏览型号1N4148的Datasheet PDF文件第3页 
M C C  
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1N4148  
Features  
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
Low Cost  
500mW 100 Volt  
Silicon Epitaxial Diode  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 35°C/W Junction To Ambient  
DO-35  
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
Peak Reverse  
Voltage  
Average Rectified  
Current  
VR  
VRM  
75V  
100V  
A
IO  
150mA Resistive Load  
Cathode  
Mark  
f > 50Hz  
Power Dissipation  
Junction  
Temperature  
Peak Forward Surge  
Current  
PTOT  
TJ  
500mW  
200°C  
B
D
IFSM  
VF  
IR  
500mA t<1s  
Maximum  
C
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
1.0V  
IFM = 10mA;  
TJ = 25°C*  
VR=20Volts  
TJ = 25°C  
TJ = 150°C  
VR=75Volts  
Measured at  
1.0MHz, VR=4.0V  
IF=10mA  
25nA  
50mA  
5uA  
DIMENSIONS  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
---  
---  
---  
25.40  
CJ  
Trr  
4pF  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
2.00  
.52  
---  
4nS  
VR = 6V  
1.000  
RL=100W  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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