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1N4148_1 PDF预览

1N4148_1

更新时间: 2024-11-30 12:53:35
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页数 文件大小 规格书
2页 320K
描述
Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction

1N4148_1 数据手册

 浏览型号1N4148_1的Datasheet PDF文件第2页 
Product specification  
1N4148  
DO-35  
Features  
1.0 2(26.0)  
MIN.  
Fast Switching Speed  
General Purpose Rectification  
Silicon Epitaxial Planar Construction  
0.079(2.0)  
MAX  
0.157 (4.0)  
MAX  
1.0 2(26.0)  
MIN.  
0.024(0.60)  
MAX  
Dimensions in inches and (millimeters)  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
Rating  
100  
Unit  
V
VRM  
VRRM  
VRWM  
VR  
75  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
300  
V
mA  
mA  
A
Forward Continuous Current *  
Average Rectified Output Current *  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ìs  
@ t = 1.0s  
IO  
150  
2.0  
IFSM  
1.0  
A
Power Dissipation *  
500  
mW  
mW/  
K/W  
PD  
1.68  
Derate Above 25℃  
Thermal Resistance Junction to Ambient Air *  
RèJA  
300  
Operating and Storage Temperature Range  
Tj,TSTG  
-65 to +175  
* Valid provided that device terminals are kept at ambient temperature.  
Electrical Characteristics Ta = 25℃  
Parameter  
Forward voltage  
Symbol  
Testconditons  
Min  
Typ Max  
Unit  
V
VF  
IF=10mA  
1.0  
5
VR = 75 V  
μA  
μA  
nA  
pF  
Peak Reverse Current  
IR  
30  
25  
4.0  
4.0  
VR = 20 V, Tj = 150 ℃  
VR = 20V  
Capacitance  
CJ  
trr  
VR = 0,f=1.0MHz  
Reverse recovery time  
IF = 10 mA IR = 1 mA, VR = 6 V, RL = 100 Ù  
ns  
Marking  
Marking  
1N4148  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  

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