Datasheet > 1N4139

1N4139

更新时间： 2024-11-14 04:24:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管
页数	文件大小	规格书
2页	58K
描述
PLASTIC SILICON RECTIFIER

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中文翻译

获取价格

数据手册

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1N4139 数据手册

GALAXY ELECTRICAL

1N4139 - - -1N4146

VOLTAGE RANGE: 50 --- 1200 V

CURRENT: 3.0 A

PLASTIC SILICON RECTIFIER

FEATURES

Low cost

DO - 27

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Free, Alcohol, Isopropanol

and similar solvents

MECHANICAL DATA

Case: JEDEC DO-27,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.041 ounces,1.15 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.

4140

4139

UNITS

4141 4142 4143 4144 4145 4146

Maximum recurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000 1200

700 840

1000 1200

Maximum DC blocking voltage

100

Maximum average forward rectified current

3.0

I_F(AV)

I_FSM

V_F

9.5mm lead length,

@T_A=75

Peak forward surge current

10ms single half-sine-wave

300.0

1.0

superimposed on rated load @T_J=125

Maximum instantaneous forward voltage

@ 3.0 A

Maximum reverse current

@T_A=25

10.0

100.0

I_R

at rated DC blocking voltage @T_A=100

Typical junction capacitance

Typical thermal resistance

(Note1)

(Note2)

C_J

Operating junction temperature range

Storage temperature range

- 55 ---- + 150

T_J

T_STG

www.galaxycn.com

Note: 1.Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

2.Thermal resistance f rom junction to ambient.

Document Number 0260008

BLGALAXY ELECTRICAL

中文翻译

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