Datasheet > 1N4007-F

1N4007-F

更新时间： 2024-11-07 10:08:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	57K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

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数据手册

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1N4007-F 数据手册

1N4001/L - 1N4007/L

1.0A RECTIFIER

SPICE MODELS: 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007

Features

Diffused Junction

High Current Capability and Low Forward

Voltage Drop

Surge Overload Rating to 30A Peak

Low Reverse Leakage Current

Plastic Material: UL Flammability

Classification Rating 94V-0

Mechanical Data

DO-41 Plastic

A-405

Dim

Min

25.40

4.06

0.71

2.00

Max

Min

Max

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

25.40

4.10

0.53

2.00

5.21

0.864

2.72

5.20

0.64

2.70

Polarity: Cathode Band

Weight: DO-41 0.30 grams (approx)

A-405 0.20 grams (approx)

All Dimensions in mm

Mounting Position: Any

Marking: Type Number

“L” Suffix Designates A-405 Package

No Suffix Designates DO-41 Package

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

4001/L 4002/L 4003/L 4004/L 4005/L 4006/L 4007/L

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

I_O

RMS Reverse Voltage

280

1.0

Average Rectified Output Current

(Note 1)

@ T_A= 75°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

Forward Voltage

@ I_F= 1.0A

V_FM

I_RM

1.0

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A25°C

5.0

@ T_A= 100°C

C_j

R_qJA

T_A

Typical Junction Capacitance (Note 2)

K/W

°C

Typical Thermal Resistance Junction to Ambient

Maximum DC Blocking Voltage Temperature

Operating and Storage Temperature Range (Note 3)

100

+150

T_j,T_STG

-65 to +175

°C

Notes:

1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1. MHz and applied reverse voltage of 4.0V DC.

3. JEDEC Value

DS28002 Rev. E-2

1 of 2

1N4001/L-1N4007/L

www.diodes.com

ã Diodes Incorporated

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