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1N4005W PDF预览

1N4005W

更新时间: 2024-12-01 02:59:23
品牌 Logo 应用领域
圣诺 - SENO 光电二极管
页数 文件大小 规格书
2页 140K
描述
1.0A SURFACE MOUNT GLASS PASSIVATED DIODE

1N4005W 数据手册

 浏览型号1N4005W的Datasheet PDF文件第2页 
Zibo Seno Electronic Engineering Co., Ltd.  
1N4001W – 1N4007W  
1.0A SURFACE MOUNT GLASS PASSIVATED DIODE  
Features  
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Glass passivated device  
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 2 5 A Peak  
Low Power Loss  
SOD - 123FL  
Cathode Band  
Top View  
Ultra-Fast Recovery Time  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
2.8±0.1  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Mechanical Data  
0.6±0.25  
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Case: SOD-123FL, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
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3.7±0.2  
Weight: 0.01 grams (approx.)  
Lead Free: For RoHS / Lead Free Version  
Dimensions in millimeters  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Characteristic  
Device marking code  
Symbol  
4001W 4002W 4003W 4004W 4005W 4006W 4007W  
UNITS  
A1  
50  
35  
A2  
100  
70  
A3  
A4  
A5  
A6  
800  
560  
A7  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
200  
140  
400  
600  
420  
1000  
800  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current  
@TL = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
25  
A
1.3  
V
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
500  
µA  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Cj  
15  
30  
pF  
°C/W  
°C  
RJL  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
www.senocn.com  
1N4001W-1N4007W  
1 of 2  
Alldatasheet  

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