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1N4006 PDF预览

1N4006

更新时间： 2024-11-30 06:24:59
品牌 Logo 应用领域
DIOTECH 二极管
页数 文件大小 规格书
2页 623K
描述
GENERAL PURPOSE SILICON RECTIFIER

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中文翻译

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1N4006 数据手册

 浏览型号1N4006的Datasheet PDF文件第2页 
1N4001 THRU 1N4007  
GENERAL PURPOSE SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 1.0 Ampere  
FEATURES  
DO-41  
●
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Construction utilizes void-free  
●
molded plastic technique  
1.0 (25.4)  
MIN.  
●
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
●
●
0.107 (2.7)  
0.080 (2.0)  
DIA.  
250 C/10 seconds,0.375  
”(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.205 (5.2)  
0.160(4.1)  
MECHANICAL DATA  
1.0 (25.4)  
MIN.  
Case: JEDEC DO-41 molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight:0.012 ounce, 0.33 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N  
4006  
1N  
4007  
1N  
1N  
1N  
1N  
1N  
SYMBOLS  
Characteristic  
UNITS  
4001 4002 4003 4004 4005  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200 400  
140 280  
200 400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
V
RRM  
RMS  
V
100  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
I
(AV)  
1.0  
A
0.375”(9.5mm) lead length at TA=75 C  
Peak forward surge current  
I
FSM  
30.0  
1.1  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
A
V
F
Maximum instantaneous forward voltage at 1.0A  
V
Maximum DC reverse current  
at rated DC blocking voltage  
T
A
=25 C  
5.0  
50.0  
µA  
I
R
T
A=100 C  
Typical junction capacitance (NOTE 1)  
C
J
pF  
C/W  
C
15.0  
50.0  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
R
JA  
STG  
T
J
,
T
-65 to +150  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted  
12

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006/4E VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006/4G VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006/4H VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006/51 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006/56 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006/58 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006/62 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006/64 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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