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1N4006 PDF预览

1N4006

更新时间: 2024-11-30 12:53:35
品牌 Logo 应用领域
TYSEMI 二极管
页数 文件大小 规格书
1页 65K
描述
Low reverse leakage High forward surge capability unless otherwise specified.

1N4006 数据手册

  
Product specification  
1N4001 thru 1N4007  
Features  
Low reverse leakage  
High forward surge capability  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified.  
Parameter  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
VRMWM  
VR  
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
70  
140  
280  
1.0  
420  
560  
700  
V
A
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current,  
8.3ms Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method)  
IFSM  
30  
A
5
50  
DC Blocking Voltage TA = 25  
IRM  
A
TA = 100  
1.1  
Forward Voltage @ IF = 1.0A  
VFM  
CJ  
V
15  
Typical Junction Capacitance  
pF  
100  
Typical Thermal Resistance Junction to Ambient  
Maximum DC Blocking Voltage Temperature  
Operating and Storage Temperature Range  
K/W  
R
JA  
+150  
-65 to 175  
TA  
Tj,TSTG  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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