Datasheet > 1N4005W

1N4005W

更新时间： 2024-12-01 02:59:15

品牌	Logo	应用领域
音特电子 - YINT		光电二极管
页数	文件大小	规格书
3页	447K
描述
Surface Mount General Purpose Silicon Rectifiers

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中文翻译

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数据手册

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1N4005W 数据手册

Surface Mount General Purpose Silicon Rectifiers

1N4001W THRU 1N4007W

Trustworthy electronic circuit protection expert

1N4001W THRU 1N4007W

Features

●For surface mounted applications

●Low profile package

●Glass Passivated Chip Junction

●Ideal for automated placement

●Lead free in comply with EU RoHS 2011/65/EU directives

Simplified outline SOD-123FL and symbol

Mechanical Data

Pinning

●Case: SOD-123FL

DESCRIPTION

Cathode

●Terminals: Solderable per MIL-STD-750, Method 2026

●Approx. Weight: 15mg 0.00053oz

Anode

Absolute Maximum Ratings And Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Parameter

Symbols

V_RRM

1N4001W 1N4002W 1N4003W 1N4004W 1N4005W 1N4006W 1N4007W Units

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RMS

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current at Tc = 125 °C

V_DC

100

1000

I_F(AV)

Peak Forward Surge Current 8.3 ms Single

Half Sine Wave Superimposed on Rated

Load

I_FSM

Maximum Forward Voltage at 1 A

Maximum DC Reverse Current Ta = 25 °C

at Rated DC Blocking Voltage Ta =125 °C

Typical Junction Capacitance ⁽¹⁾

Typical Thermal Resistance ⁽²⁾

Operating and Storage Temperature Range

V_F

I_R

1.1

μA

C_j

8(TYP.)

℃/W

℃

R_θJA

T_j, T_stg

-55 ~ +150

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

www.yint.com.cn

Rev:19.3

12 3

中文翻译

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