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1N4002-T PDF预览

1N4002-T

更新时间: 2024-11-01 20:27:47
品牌 Logo 应用领域
RECTRON PC二极管
页数 文件大小 规格书
2页 22K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

1N4002-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.07
Is Samacsys:N其他特性:HIGH CURRENT CAPABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4002-T 数据手册

 浏览型号1N4002-T的Datasheet PDF文件第2页 
1N4001  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
1N4007  
SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Low cost  
* Low leakage  
* Low forward voltage drop  
* High current capability  
DO-41  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.034 (0.9)  
DIA.  
.028 (0.7)  
1.0 (25.4)  
MIN.  
* Weight: 0.33 gram  
.205 (5.2)  
.166 (4.2)  
.107 (2.7)  
DIA.  
.080 (2.0)  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNITS  
V
V
RRM  
RMS  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC Blocking Voltage  
V
DC  
O
100  
1000  
Maximum Average Forward Rectified Current  
I
1.0  
Amps  
Amps  
at TA  
= 75oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
30  
15  
Typical Junction Capacitance (Note)  
Typical Thermal Resistance  
CJ  
pF  
0C/ W  
0 C  
R θ J A  
, TSTG  
50  
T
J
-55 to + 150  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
SYMBOL  
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNITS  
CHARACTERISTICS  
1.1  
5.0  
50  
Volts  
V
F
Maximum Instantaneous Forward Voltage at 1.0A DC  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
@T  
A
A
= 25oC  
= 100oC  
uAmps  
I
R
Maximum Full Load Reverse Current Average, Full Cycle  
.375” (9.5mm) lead length at T  
= 75oC  
NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts  
30  
uAmps  
L
Z
2002-11  

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