1N4001W
THRU
1N4007W
SURFACE MOUNT
GENERAL PURPOSE SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* P/N suffix V means AEC-Q101 qualifiedꢀ e.g:1N4001WV
* P/N suffix V means Halogen-free
PINNING
PIN
1
DESCRIPTION
Cathode
2
Anode
MECHANICAL DATA
1
2
*
*
Epoxy : Device has UL flammability classification 94V-0
Terminals: Solderable per MIL-STD-750, Method 2026
TopꢀView
MarkingꢀCodeꢀA1-A7
SimplifiedꢀoutlineꢀSOD-123F(Lꢀ) anꢀd symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
resistive or inductive load.
O
MAXIMUM RATINGS (@ T
A
=25 C unless otherwise noted)
SYMBOL
1N4001W
1N4002W
100
1N4003W
200
1N4004W
400
1N4005W 1N4006W 1N4007W UNITS
RATINGS
VRRM
VRMS
VDC
50
35
50
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
70
140
280
100
200
400
Maximum DC Blocking Voltage
1000
Maximum Average Forward Rectified Current
at Ambient Temperature
IO
1.0
30
Amps
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
Current Squarad Time
I2
t
3.7
90
A2/Sec
0C/W
Typical Thermal Resistance (Note 1)
R
J A
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
CJ
TJ
8
pF
0 C
0 C
-55 to + 150
-55 to + 150
TSTG
O
ELECTRICAL CHARACTERISTICS(@T
A
=25 C unless otherwise noted)
1N4001W
1N4002W
1N4003W
1N4004W
1.1
1N4005W 1N4006W 1N4007W
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
SYMBOL
VF
UNITS
Volts
uA
@TA = 25oC
Maximum Average Reverse Current
5.0
IR
at Rated DC Blocking Voltage
@TA = 150oC
1.0
mA
2020-01
REV:B
NOTES : 1. Thermal Resistance :Mounted on PCB.
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.