Datasheet > 1N4001G

1N4001G

更新时间： 2024-11-19 06:16:19

品牌	Logo	应用领域
SECOS		二极管 IOT
页数	文件大小	规格书
2页	144K
描述
VOLTAGE 50V ~ 1000V 1.0 AMP Glass Passivated Silicon Rectifiers

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1N4001G 数据手册

1N4001G THRU 1N4007G

VOLTAGE 50V ~ 1000V

Elektronische Bauelemente

1.0 AMP Glass Passivated Silicon Rectifiers

A suffix of "-C" indicates halogen-free & RoHS Compliant

DO-41

.107(2.7)

.080(2.0)

DIA.

ƔFEATURES

1.0(25.4)

MIN.

RoHS Compliant Product

Low Forward Voltage Drop

High Current Capability

High Reliability

.205(5.2)

.166(4.2)

High Surge Current Capability

1.0(25.4)

MIN.

.034(.9)

.028(.7)

DIA.

ƔMECHANICAL DATA

Case: Molded Plastic

Dimensions in inches and (millimeters)

Epoxy: UL 94V-0 Rate Flame Retardant

Lead: Axial Lead, Solder Able per MIL-STD-202,

Method 208 Guaranteed

Polarity: Color Band Denotes Cathode End

Mounting Position: Any

Weight: 0.34 grams

ƔMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25ȃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G

UNITS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current,

.375" (9.5mm) Lead Length at Ta=75 к

Peak Forward Surge Current, 8.3 ms Single

Half Sine-Wave Superimposed on Rated Load

(JEDEC method)

1.0

Maximum Instantaneous Forward Voltage at 1.0A

1.0

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note1)

Typical Thermal Resistance RșJA (Note 2)

Operating and Storage Temperature Range T_J, T_STG

NOTES:

Ta = 25 к

Ta = 100 к

5.0

µA

к / W

-65 ~ +175

1. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) Lead Length.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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