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1N4001G_V01 PDF预览

1N4001G_V01

更新时间： 2024-10-31 01:25:51
品牌 Logo 应用领域
辰达行 - MDD /
页数 文件大小 规格书
2页 735K
描述
GLASS PASSIVATED SILICON RECTIFIER

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中文翻译

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1N4001G_V01 数据手册

 浏览型号1N4001G_V01的Datasheet PDF文件第2页 
1N4001G THRU 1N4007G  
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere  
GLASS PASSIVATED SILICON RECTIFIER  
DO-41  
Features  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
1.0 (25.4)  
MIN.  
Construction utilizes void-free molded plastic technique  
Glass passivated junction  
0.107 (2.7)  
0.080 (2.3)  
DIA.  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed  
250℃/ 10 seconds at terminals  
0.205(5.2)  
0.166(4.2)  
Mechanical Data  
1.0 (25.4)  
MIN.  
Case : JEDEC DO-41 Molded plastic body  
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026  
Polarity : Polarity symbol marking on body  
Mounting Position: Any  
0.025 (0.65)  
0.021 (0.55)  
DIA.  
Weight  
: 0.012 ounce, 0.33 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G  
Parameter  
SYMBOLS  
UNITS  
MDD  
MDD  
MDD  
MDD  
MDD  
MDD  
MDD  
Marking Code  
1N4001G 1N4001G 1N4001G 1N4001G 1N4001G 1N4001G 1N4001G  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
RMM  
RMS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
V
100  
1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
1.0  
I
(AV)  
A
at TA=75℃  
Peak forward surge current  
30  
I
FSM  
8.3ms single half sine-wave  
A
superimposed onrated load (JEDEC Method)  
Maximum instantaneous forward voltage at 1.0A  
V
F
1.10  
V
5.0  
50.0  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25℃  
μA  
I
R
TA=100℃  
15.0  
50.0  
Typical junction capacitance (NOTE 1)  
Typical thermal resistance (NOTE 2)  
C
J
pF  
℃/W  
℃
R
θ
JA  
STG  
-55 to +150  
Operating junction and storage temperature range  
T T  
J,  
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.  
2.Mounted on 10cm x 10cm x 1mm copper pad area  
3.The typical data above is for reference only.  
DN:T19820A0  
https://www.microdiode.com  
Rev:2019A0  
Page :1  
12

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