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1N4001G-13 PDF预览

1N4001G-13

更新时间: 2024-10-30 14:37:07
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
2页 68K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

1N4001G-13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):235
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:2 µs表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

1N4001G-13 数据手册

 浏览型号1N4001G-13的Datasheet PDF文件第2页 
SPICE MODELS: 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G 1N4001GL 1N4002GL 1N4003GL 1N4004GL 1N4005GL 1N4006GL 1N4007GL  
1N4001G/L - 1N4007G/L  
1.0A GLASS PASSIVATED RECTIFIER  
Features  
·
·
·
Glass Passivated Die Construction  
Diffused Junction  
High Current Capability and Low Forward  
Voltage Drop  
A
B
A
·
·
Surge Overload Rating to 30A Peak  
Plastic Material - UL Flammability  
Classification 94V-0  
C
D
Mechanical Data  
DO-41 Plastic  
A-405  
Dim  
A
Min  
25.40  
4.06  
0.71  
2.00  
Max  
Min  
Max  
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
25.40  
4.10  
0.53  
2.00  
B
5.21  
0.864  
2.72  
5.20  
0.64  
2.70  
·
·
Polarity: Cathode Band  
C
Weight: DO-41 0.30 grams (approx)  
D
A-405 0.20 grams (approx)  
All Dimensions in mm  
·
·
Mounting Position: Any  
Marking: Type Number  
“L” Suffix Designates A-405 Package  
No Suffix Designates DO-41 Package  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007  
Characteristic  
Symbol  
Unit  
G/GL  
G/GL  
100  
70  
G/GL  
G/GL  
G/GL  
G/GL  
G/GL  
1000  
700  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
200  
400  
600  
800  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
140  
280  
1.0  
420  
560  
V
A
Average Rectified Output Current  
(Note 1)  
@ TA = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@ IF = 1.0A  
VFM  
IRM  
1.0  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TA 25°C  
=
5.0  
50  
µA  
@ TA = 125°C  
trr  
Cj  
Reverse Recovery Time (Note 3)  
2.0  
8.0  
µs  
pF  
Typical Junction Capacitance (Note 2)  
RqJA  
Tj, TSTG  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
100  
K/W  
°C  
-65 to +175  
Notes:  
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. Measured with IF = 0.5A, IR = -1A, Irr = 0.25A.  
DS29002 Rev. D-2  
1 of 2  
1N4001G/L-1N4007G/L  
www.diodes.com  
ã Diodes Incorporated  

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