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1N4001G-K PDF预览

1N4001G-K

更新时间: 2024-10-31 02:50:23
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5页 391K
描述
1A, 50V - 1000V Standard Rectifier

1N4001G-K 数据手册

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1N4001G-K 1N4007G-K  
Taiwan Semiconductor  
1A, 50V - 1000V Standard Rectifier  
FEATURES  
KEY PARAMETERS  
Glass passivated chip junction  
High current capability, Low VF  
High reliability  
High surge current capability  
Low power loss, high efficiency  
RoHS Compliant  
PARAMETER  
IF  
VRRM  
VALUE  
UNIT  
1
50 - 1000  
30  
A
V
IFSM  
A
TJ MAX  
150  
°C  
Halogen-free according to IEC 61249-2-21  
Package  
Configuration  
DO-204AL (DO-41)  
Single die  
APPLICATIONS  
DC to DC converter  
Switching mode converters and inverters  
General purpose  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
Molding compound meets UL 94V-0 flammability rating  
Terminal: Pure tin plated leads, solderable per J-STD-002  
Meet JESD 201 class 1A whisker test  
Polarity: Indicated by cathode band  
Weight: 0.330g (approximately)  
DO-204AL (DO-41)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
4001G 4002G 4003G 4004G 4005G 4006G 4007G  
PARAMETER  
SYMBOL  
UNIT  
-K  
1N  
-K  
1N  
-K  
1N  
-K  
1N  
-K  
1N  
-K  
1N  
-K  
1N  
Marking code on the device  
4001G 4002G 4003G 4004G 4005G 4006G 4007G  
Repetitive peak reverse voltage  
Reverse voltage, total rms value  
Forward current  
VRRM  
VR(RMS)  
IF  
50  
35  
100  
70  
200  
140  
400  
280  
1
600  
420  
800  
560  
1000  
700  
V
V
A
Surge peak forward current,  
8.3ms single half sine wave  
superimposed on rated load  
IFSM  
30  
A
Junction temperature  
Storage temperature  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
1
Version: B2104  

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