Datasheet > 1N3826CUR-1E3

1N3826CUR-1E3

更新时间： 2024-11-07 13:46:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	242K
描述
Zener Diode, 5.1V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERMETIC SEALED, LEADLESS, GLASS, MELF-2

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技术参数
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1N3826CUR-1E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-213AB
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.49
其他特性：	METALLURGICALLY BONDED, HIGH RELIABILITY	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	7 Ω
JEDEC-95代码：	DO-213AB	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e3	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL	最大功率耗散：	1.25 W
认证状态：	Not Qualified	标称参考电压：	5.1 V
子类别：	Voltage Reference Diodes	表面贴装：	YES
技术：	ZENER	端子面层：	MATTE TIN
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	40	最大电压容差：	2%
工作测试电流：	49 mA	Base Number Matches：	1

1N3826CUR-1E3 数据手册

1N3821UR-1 thru 1N3830AUR-1, e3 or

MLL3821 thru MLL3830A, e3

S C O T T S D A L E D I V I S I O N

LEADLESS GLASS ZENER DIODES

DESCRIPTION

APPEARANCE

This surface mountable zener diode series is similar to the lower voltage

1N3821 thru 1N3830 JEDEC registration except it is in a surface mount

DO-213AB package outline. It is an ideal selection for applications of high

density and low parasitic requirements. Due to its glass hermetic qualities

and enhanced metallurgical bonded internal construction, it is also well

suited for high reliability applications. This can be acquired by a source

control drawing (SCD), or simply by ordering device types with a MQ, MX

or MV prefix for equivalent screening to JAN, JANTX or JANTXV

respectively.

DO-213AB

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Leadless package for surface mount equivalent to

1N3821 thru 1N3830A.

•

Regulates voltage over a broad operating current

and temperature range

•

Ideal for high-density mounting

•

Leadless package for surface mounting

Tight voltage tolerances available

Ideal for high-density mounting

Lower voltage selections of 3.3 V to 7.5 V

Hermetically sealed, double-slug glass construction

Metallurgically enhanced contact construction

Metallurgically enhanced internal contact design

for greater reliability and lower thermal resistance

Options for screening in accordance with MIL-PRF-

19500/115 for JAN, JANTX, and JANTXV with MQ, MX

or MV prefixes respectively for part numbers, e.g.

MX1N3821AUR-1, MV1N3828AUR-1, etc.

•

Nonsensitive to ESD

Hermetically sealed glass package

Specified capacitance (see Figure 2)

•

Axial lead “thru-hole” DO-13 packages per JEDEC

registration available as 1N3821A thru 1N3830A (see

separate data sheet with MIL-PRF-19500/115

qualification)

Inherently radiation hard as described in

Microsemi MicroNote 050

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

Power dissipation at 25^ºC: 1.5 watts (also see derating

in Figure 1).

•

CASE: Hermetically sealed glass MELF package

TERMINALS: Tin-Lead (SN/Pb) or RoHS

compliant annealed matte-Tin (Sn) plating

solderable per MIL-STD-750, method 2026

•

Operating and Storage temperature: -65^ºC to +175^ºC

Thermal Resistance: 40 ^ºC/W junction to end cap, or

120^ºC/W junction to ambient when mounted on FR4 PC

board (1 oz Cu) with recommended footprint (see last

page)

•

POLARITY: Cathode indicated by band. Diode

to be operated with the banded end positive with

respect to the opposite end for Zener regulation

•

Steady-State Power: 1.50 watts at end-cap

temperature T_EC< 115^oC, or 1.25 watts at T_A= 25^ºC

when mounted on FR4 PC board and recommended

footprint as described for thermal resistance (also see

Figure 1)

•

MARKING: Cathode band only

TAPE & REEL optional: Standard per EIA-481-1-

A with 12 mm tape, 1500 per 7 inch reel or 5000

per 13 inch reel (add “TR” suffix to part number)

•

WEIGHT: 0.05 grams

•

Forward voltage @200 mA: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (max)

•See package dimensions on last page

3-12-2006 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与1N3826CUR-1E3相关器件

型号	品牌	获取价格	描述	数据表
1N3826CUR-1TRE3	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 2%, 1.5W,
1N3826DE3	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 1%, 1W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PAC
1N3826DUR-1TRE3	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 1%, 1.5W,
1N3826-TP	MCC	获取价格	暂无描述
1N3826TR	MICROSEMI	获取价格	SILICON 1 WATT ZENER DIODES
1N3826TRE3	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 10%, 1W,
1N3826UR-1	MICROSEMI	获取价格	SILICON 1 WATT ZENER DIODES
1N3826UR-1E3	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HER
1N3826UR-1E3TR	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HER
1N3826UR-1TR	MICROSEMI	获取价格	SILICON 1 WATT ZENER DIODES

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