生命周期: | Active | 包装说明: | DO-21, 1 PIN |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.7 |
其他特性: | LOW LEAKAGE CURRENT | 应用: | SOFT RECOVERY POWER |
外壳连接: | ANODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-208AA | JESD-30 代码: | O-MUPF-P1 |
最大非重复峰值正向电流: | 400 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 35 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | PRESS FIT |
最大重复峰值反向电压: | 100 V | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N3493 | NJSEMI |
获取价格 |
Diode Switching 200V 35A 2-Pin DO-21 | |
1N3493 | MICROSEMI |
获取价格 |
Silicon Power Rectifier | |
1N3493R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 35A, 200V V(RRM), Silicon, DO-208AA, DO-21, 1 PIN | |
1N3493R | MOTOROLA |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, DO-21 | |
1N3493RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 35A, 200V V(RRM), Silicon, DO-208AA, DO-21, 1 PIN | |
1N3493RS | ASI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 35A, 200V V(RRM), Silicon, DO-21, | |
1N3493S | ASI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 35A, 200V V(RRM), Silicon, DO-21, | |
1N3494 | MICROSEMI |
获取价格 |
Silicon Power Rectifier | |
1N3494 | NJSEMI |
获取价格 |
Diode Switching 300V 35A 2-Pin DO-21 | |
1N3494 | MOTOROLA |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 25A, 300V V(RRM), Silicon, DO-21, |