是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DO-5 |
包装说明: | DO-5, 1 PIN | 针数: | 1 |
Reach Compliance Code: | compliant | HTS代码: | 8541.10.00.80 |
风险等级: | 5.33 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 应用: | GENERAL PURPOSE |
外壳连接: | ANODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-203AB | JESD-30 代码: | O-MUPM-D1 |
JESD-609代码: | e2 | 最大非重复峰值正向电流: | 900 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 1 | 最大输出电流: | 60 A |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 200 V |
表面贴装: | NO | 端子面层: | TIN COPPER |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | 40 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N2131A | VISHAY |
获取价格 |
Power Silicon Rectifier Diodes, 35 A/40 A/60 A |
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1N2131A | AMERICASEMI |
获取价格 |
DEVICE HIGH POWER STANDARD |
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1N2131A | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 200V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2131A | INFINEON |
获取价格 |
35,40,and 60 Amp Power Silicon Rectifier Diodes |
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1N2131A | NJSEMI |
获取价格 |
Diode Switching 200V 70A 2-Pin DO-5 |
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1N2131APBF | INFINEON |
获取价格 |
暂无描述 |
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1N2131AR | AMERICASEMI |
获取价格 |
DEVICE HIGH POWER STANDARD |
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1N2131AR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 200V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2131E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 200V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2131R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 200V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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