生命周期: | Active | 包装说明: | DO-5, 1 PIN |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.67 |
Is Samacsys: | N | 应用: | POWER |
外壳连接: | CATHODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-203AB | JESD-30 代码: | O-MUPM-D1 |
最大非重复峰值正向电流: | 1050 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 200 °C | 最低工作温度: | -65 °C |
最大输出电流: | 70 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
最大重复峰值反向电压: | 300 V | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N2133E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 300V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2133R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 300V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2133RA | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 60A, 300V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, |
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1N2134 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER |
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1N2134A | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 350V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2134AE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 350V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2134AR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 350V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2134ARE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 350V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2134R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 350V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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1N2134RA | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 70A, 350V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
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