生命周期: | Active | 包装说明: | DO-9, 1 PIN |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.68 |
Is Samacsys: | N | 应用: | SOFT RECOVERY POWER |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-205AB | JESD-30 代码: | O-MUPM-H1 |
最大非重复峰值正向电流: | 5000 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 190 °C | 最低工作温度: | -65 °C |
最大输出电流: | 275 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
最大重复峰值反向电压: | 150 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N2056R | ETC |
获取价格 |
Standard Rectifier (trr more than 500ns) | |
1N2056RIL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 275A, 150V V(RRM), | |
1N2057 | DIGITRON |
获取价格 |
Rectifier, High Power; Max Peak Repetitive Reverse Voltage: 250; Max TMS Bridge Input Volt | |
1N2057 | VISHAY |
获取价格 |
DIODE 250 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AB, DO-9, 1 PIN, Rectifier Diode | |
1N2057 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N2057E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N2057IL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N2057R | DIGITRON |
获取价格 |
Rectifier, High Power; Max Peak Repetitive Reverse Voltage: 250; Max TMS Bridge Input Volt | |
1N2057R | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 250A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N2057RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN |