是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-9 |
包装说明: | DO-9, 1 PIN | 针数: | 1 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.51 |
应用: | SOFT RECOVERY POWER | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.3 V |
JEDEC-95代码: | DO-205AB | JESD-30 代码: | O-MUPM-H1 |
JESD-609代码: | e0 | 最大非重复峰值正向电流: | 5000 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 1 | 最高工作温度: | 190 °C |
最低工作温度: | -65 °C | 最大输出电流: | 275 A |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 200 V |
子类别: | Rectifier Diodes | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N2057R | DIGITRON |
获取价格 |
Rectifier, High Power; Max Peak Repetitive Reverse Voltage: 250; Max TMS Bridge Input Volt | |
1N2057R | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 250A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N2057RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N2057RIL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 275A, 200V V(RRM), | |
1N2058 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N2058E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 250V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N2058IL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 250V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N2058ILE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 250V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N2058R | ETC |
获取价格 |
Standard Rectifier (trr more than 500ns) | |
1N2058RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 250V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN |